Dr Mark C. Ridgway, Senior Fellow, Department of Electronic Materials Engineering (EME), Research School of Physical Sciences and Engineering (RSPhysSE), Australian National University .
Brief CV:
Qualifications: B.Sc. (Chemistry/Physics), McMaster University (1982)
M.Sc. (Physics), Queen's University (1984)
Ph.D. (Physics), Queen's University (1988).
Chartered Professional Engineer, Institution of Engineers, Australia (1994).
Current Employment: Senior Fellow, Department of Electronic Materials Engineering (EME), Research School of Physical Sciences and Engineering (RSPhysSE), Australian National University (ANU), Canberra, Australia (since Jul. 2000).
Employment History: Postdoctoral Fellow (Feb. 1990-Feb. 1991), Research Fellow (Feb. 1991-Jul. 1994), Fellow (Jul. 1994-Jul. 2000), EME, RSPhysSE, ANU, Canberra, Australia.
Postdoctoral Fellow, Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Australia (Aug.1988-Feb. 1990).
University-wide responsibilities include:
Appointed to the Steering Committee, ANU Centre for the Science and Engineering of Materials (2000)
Appointed as Convenor, ANU Graduate Program in the Science and Engineering of Materials (2000)
Appointed to the Board of Studies, ANU Graduate Program in Physical Sciences (2002) and ANU Graduate Program in Environment (2003)
Appointed as Chair, Cross-Campus Activities Committee, National Institute for Physical Sciences (2002)
Recent awards:
The 2003 ANU Vice Chancellor's Award for Excellence in Supervision
Commitment to teaching:
Co-organiser of the Australian Synchrotron Summer School (2004)
Brief summary of expertise and significant research achievements:
Dr Ridgway has made significant contributions to the fields of processing
and characterisation of semiconductor materials with technological
relevance in electronic and photonic device fabrication. He pioneered
and developed implant isolation technologies for both Si and compound
semiconductors based on high-energy ion implantation and this processing
method is used today in selected, vertical compound semiconductor devices.
As a result of his research on the production and stability of
implantation-induced disorder, he was elected to the Bohmische Physical
Society.
Dr Ridgway's contributions to the understanding of the recrystallisation of amorphised semiconductors yielded new insights into this important phenomenon. In particular, he was the first to establish the causes of defective recrystallisation in amorphised, compound semiconductors ending years of debate in the international literature. Furthermore, he pioneered the application of synchrotron-radiation-based x-ray techniques to implanted semiconductors, for example, demonstrating a bond-length composition dependence in crystalline and amorphised GexSi1-x alloys and an implant-parameter dependence for the structure of amorphised Ge. He was the first to quantify the separate contributions of the reduction in bond-length and bond-angle distortion to the relaxation enthalpy during structural relaxation in amorphised Ge.
Most recently, graduate students and post-doctoral fellows within the Ridgway group demonstrated structural relaxation of InP is mediated by point-defect annealing and nanocrystals of Ge exhibit subtle structural perturbations relative to bulk material. Such experiments were technically challenging, necessitating innovative processing and analysis methods. The significance of his contributions to both ion-beam and x-ray characterisation were demonstrated by appointment to national/international specialist committees in both disciplines, invited national/international conference presentations and multiple high-quality journal publications.
With others, Dr Ridgway lobbied for the construction of a national synchrotron.
He was subsequently appointed to the National Scientific Advisory
Committee for the Australian Synchrotron and is currently responsible
for the EXAFS beamline. He is a frequent referee for both international
journals and granting agencies and consistently attracts Honours and
post-graduate students and national/international collaborators and
sabbatical visitors.
OTHER EVIDENCE OF IMPACT AND CONTRIBUTIONS TO THE FIELD
Recent invited conference presentations include "Atomic level characterisation of amorphised GaAs" (European Materials Research Society Meeting, France, 1998), "An EXAFS beamline for the Australian Synchrotron" (1st Australian Synchrotron Users Workshop, Australia, 2003), "EXAFS characterisation of Ge nanocrystals in silica" (12th International Conference on Radiation Effects in Insulators, Brazil, 2003) and "Structure in amorphous semiconductors" (4th International Conference on Synchrotron Radiation in Materials Science, France, 2004).
Appointed to Program Committees for the 9th International Conference on Ion Beam Modification of Materials (1995), 10th Australian Conference on Nuclear Techniques of Analysis (1997), 15th International Conference on Ion Beam Analysis and 12th Australian Conference on Nuclear Techniques of Analysis (2001), 1st Australian Synchrotron Users Workshop (2003), 14th International Conference on Vacuum Ultraviolet Radiation Physics (2004), 16th Australian Institute of Physics Congress (2005).
Appointed to the International Steering Committee for the Radiation Effects in Insulators International Conference Series.
Invited Guest Editor for Proceedings of the 9th International Conference on Ion Beam Modification of Materials (Elsevier, Amsterdam, 1995) and Proceedings of the 15th International Conference on Ion Beam Analysis (Elsevier, Amsterdam, 2002).
Awarded bursary from the Institute National de Physique Nucleaire et de Physique des Particules, France (1999) and a French Government Scientific Fellowship, France (1999).
Appointed to the Accelerator Science Specialist Committee, Australian Institute of Nuclear Science and Engineering (1997), the Photon Factory Specialist Committee, Australian Synchrotron Research Program (2000), the National Scientific Advisory Committee, Australian Synchrotron (2001) and the Coordinating Committee, Australian Synchrotron Research Program (2002).
Appointed as Chair of the the Photon Factory Specialist Committee, Australian Synchrotron Research Program (2002)
Students and postdocs likely to be involved in or use the Network:
Fourth-Year Honours Students;
R. Albion, B.Eng., "Formation and characterisation of compound
semiconductor nanocrystals", Faculty of Engineering and
Information Technology, ANU, 2003-present.
S. Everett, B.Sc., "Atomic-scale structure in amorphous GaN",
Physics Department, Faculty of Science, ANU, 2004-present.
Post-Graduate Students;
D.A. Brett, Ph.D., "Metal impurity gettering in Si", 2001-present.
A. Khalil, Ph.D., "Characterisation of irradiation-induced disorder
in semiconductors", 2001-present.
Z. Hussain, M.Sc., "Amorphisation of ternary semiconductors", 2003-present.
B. Johannessen, Ph.D., "Metallic nanocrystal formation and
amorphisation", 2004-present.
Post-Doctoral Fellows;
C.J. Glover, Australian Research Council Post-Doctoral Fellow (Australia),
2002-present.
S.M. Kluth, Australian Research Council Post-Doctoral Fellow (Australia),
2003-present.
P. Kluth, Humboldt Fellow (Germany), 2003-present.
R. Dogra, Australian Research Council Discovery Project (Australia),
2004-present.
Relevant grants:
| 2003-2005 | M.C. Ridgway and A.P. Byrne, Atomic-Scale Identification of Amorphisation and Relaxation Processes in Compound Semiconductors, ARC, DP, $295,000. |
| 2003 | P.A. Lay, M.C. Ridgway, G.J. Foran, I.R. Gentle , S.P. Best, M.J. Riley, A.J. Berry, A.R. Gerson, T.W. Hambley, S.K. Bhargava, R.F. Garrett and D.C. Creagh, Fluorescence detector for the Australian National Beamline Facility, ARC, LEIF, $503,000. |
| 2003-2004 | M.C. Ridgway and H. Bernas, Nanocavities in Si - Structural Evolution and Metal Gettering, ARC, DP, $124,000. |
| 2003-2004 | M.C. Ridgway, Amorphous Compound Semiconductors - Formation and Relaxation, Australian Synchrotron Research Program, $18,000. |
| 2003 | M.C. Ridgway, Irradiation-induced preferential amorphisation of semiconducting and metallic nanaocrystals in SiO2 measured with EXAFS, Australian Synchrotron Research Program, $4,000. |
| 2003 | M.C. Ridgway, Electronic structure and interface effects of Ge nanocrystals embedded in a SiO2 matrix, Australian Synchrotron Research Program, $7,000. |
| 2003 | M.C. Ridgway, Atomic-Scale Structure of Amorphised and Relaxed Compound Semiconductors, Access to Major Research Facilities Program, $7,000. |
| 2003 | M.C. Ridgway, Nanocavity formation mechanisms in Si substrates studied with in-situ transmission electron microscopy, Australian Institute of Nuclear Science and Engineering, $9,000. |
Relevant publications:
1. ** M.C. Ridgway, C.J. Glover, G. Foran and K.M. Yu, "Atomic-level
characterisation of the structure of amorphised GaAs utilising EXAFS
measurements", Nucl.Instrum.Meth. B147 (1999) 148-154.
2. J. Gazecki, J.M. Kubica, M. Zamora, G.K. Reeves, C.M. Johnson
and M.C. Ridgway, "Refractive indices and thickness of optical waveguides
fabricated by Si ion implantation into silica glass", Thin Solid Films
340 (1999) 233-236.
3. ** M.C. Ridgway, C.J. Glover, E. Bezakova, A.P. Byrne, G.J. Foran
and K.M. Yu, "Atomic-level characterisation of ion-induced
amorphisation in compound semiconductors", Nucl.Instrum.Meth.
B148 (1999) 391-395.
4. N. Papanicolaou, M.V. Rao, B. Molnar, J. Tucker, A. Edwards,
O.W. Holland and M.C. Ridgway, "Ion implantation of SiC and GaN",
Nucl.Instrum.Meth. B148 (1999) 416-420.
5. S.A. Goodman, F.D. Auret, M.C. Ridgway and G. Myburg, "Proton
irradiation of n-type GaAs", Nucl.Instrum.Meth. B148 (1999) 446-449.
6. ** C.J. Glover, M.C. Ridgway, K.M. Yu, G.J. Foran, T.W. Lee,
Y. Moon, E. Yoon, "Structural characterisation of amorphised InP:
evidence for chemical disorder", Appl.Phys.Lett. 74 (1999) 1713-1715.
7. ** C.J. Glover, K.M. Yu, M.C. Ridgway and G.J. Foran,
"Characterisation of ion-implantation-induced disorder in GaAs
by EXAFS", Jap.J.Appl.Phys. 38 Suppl. 38-1 (1999) 548-551.
8. M.V. Rao, J.B. Tucker, M.C. Ridgway, O.W. Holland, M.A. Capano,
N. Papanicolaou and J. Mittereder, "Ion implantation in bulk
semi-insulating 4H-SiC", J.Appl.Phys. 86 (1999) 752-758.
9. ** M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc,
J.L. Hansen and A. Nylandsted Larsen, "Composition-dependent bondlengths
in crystalline and amorphous GexSi1-x alloys", Phys.Rev. B60 (1999)
10831-10836.
10. W. Shan, K.M. Yu, W. Walukiewicz, J.W. Ager III, E.E. Haller and
M.C. Ridgway, "Reduction of band-gap energy in GaNAs and AlGaNAs
synthesized by N+ implantation", Appl.Phys.Lett. 75 (1999) 1410-1412.
11. ** E. Bezakova, A.P. Byrne, C.J. Glover, M.C. Ridgway and
R. Vianden, "Implantation-induced amorphisation of InP characterised
with Perturbed Angular Correlation", Appl.Phys.Lett. 75 (1999) 1923-1925.
12. ** K.M. Yu, W. Walukiewicz, S. Muto, H.-C. Jin, J.R. Abelson,
C. Clerc, C.J. Glover and M.C. Ridgway, "The local structures of Ga
atoms in a- Si and a-Si:H before and after synchrotron x-ray
irradiation", Appl.Phys.Lett. 75 (1999) 3282-3284.
13. P.N.K. Deenapanray, K.T. Hillie, C.M. Demanet and
M.C. Ridgway, "An AFM and HR-RBS investigation of the surface
modification of magnetron sputter etched Si (111) in an Ar plasma at
different pressures", Surf.Int.Analysis 27 (1999) 881-888.
14. P.W. Leech and M.C. Ridgway, "Effect of MeV O2+ implantation
on the reactive ion etch rate of LiTaO3", Nucl.Instrum.Meth. 159
(1999) 187-190.
15. ** K.M. Yu, W. Shan, C.J. Glover, M.C. Ridgway, W. Wong and
W. Yang, "Local structures of free-standing AlGaN thin films studied
by extended x-ray absorption fine structure", Appl.Phys.Lett. 75
(1999) 4097-4099.
16. M.V. Rao, A.K. Berry, T.Q. Do, M.C. Ridgway and P.H. Chi,
"S and Si ion implantation in GaSb grown on GaAs", J.Appl.Phys. 86
(1999) 6068-6071.
17. P.W. Leech and M.C. Ridgway, "Enhancement of the reactive
ion etch rate of LiNbO3 and LiTaO3 by prior bombardment with MeV O2+
ions", J.Vac.Sci.Tech. A 17 (1999) 3358-3361.
18. ** C.J. Glover, M.C. Ridgway, A.P. Byrne, K.M. Yu, G.J. Foran,
C. Clerc, J.L. Hansen and A. Nylandsted Larsen, "Micro- and
macro-structure of implantation-induced disorder in Ge", Nucl.Instrum.Meth.
B161-163 (2000) 1033-1037.
19. ** K.M. Yu and M.C. Ridgway, "Zn and Group V Element co-implantation
in InP", Nucl.Instrum.Meth., Nucl.Instrum.Meth. B168 (2000) 65-71.
20. ** M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc,
J.L. Hansen and A. Nylandsted Larsen, "Ion-dose-dependent micro-structure
in amorphised Ge", Phys.Rev. B61 (2000) 12586-12589.
21. K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Ager III,
E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson and
M.C. Ridgway, "Nitrogen-induced enhancement of the electron
concentration in Sulfur implanted GaNxAs1-x", Appl.Phys.Lett.
77 (2000) 2858-2860.
22. J.S. Williams, Xianfang Zhu, M.C. Ridgway, M.J. Conway,
B.C. Williams, F. Fortuna, M-O. Ruault and H. Bernas, "Preferential
Amorphization and Defect Annihilation at Nanocavities in Silicon
During Ion Irradiation", Appl.Phys.Lett. 77 (2000) 4280-4282.
23. ** C.J. Glover, M.C. Ridgway, I.D. Desnica-Frankovic, K.M. Yu,
G.J. Foran, C. Clerc, J.L. Hansen and A. Nylandsted Larsen,
"Structural-relaxation-induced bond length and bond angle changes
in amorphised Ge", Phys.Rev. B63 (2001) 073204/1-4.
24. ** I.D. Desnica-Frankovic, K. Furic, U.V. Desnica, M.C. Ridgway
and C.J. Glover, "Structural modifications in amorphous Ge produced
by ion implantation", Nucl.Instrum.Meth. B178 (2001) 192-195.
25. J.S. Williams, M.C. Ridgway, M.J. Conway, J. Wong-Leung,
X.F. Zhu, M. Petravic, F. Fortuna, M.-O. Ruault, H. Bernas, A. Kinomura,
Y. Nakano and Y. Hayashi, "Interaction of Defects and Metals with
Nanocavities in Silicon", Nucl.Instrum.Meth. B178 (2001) 33-43.
26. ** C.J. Glover, M.C. Ridgway, I.D. Desnica-Frankovic, K.M. Yu,
G.J. Foran, C. Clerc, J.L. Hansen and A. Nylandsted Larsen,
"Structural-relaxation-induced bond length and bond angle changes
in amorphised Ge", Phys.Rev. B61 (2001) 073204/1-4.
27. ** C.J. Glover, M.C. Ridgway, K.M. Yu, G.J. Foran, C. Clerc,
J.L. Hansen and A. Nylandsted Larsen, "Structure and low temperature
relaxation of ion-implanted Ge", J.Sync.Rad. 8 (2001) 773-775.
28. ** M.C. Ridgway, C.J. Glover, I.D. Desnica-Frankovic, K.M Yu,
G.J. Foran, C. Clerc, J.L Hansen and A. Nylandsted Larsen,
"Implantation-induced disorder in amorphous Ge: production and
relaxation", Nucl.Instrum.Meth.B175-177 (2001) 21-25.
29. ** C.J. Glover, A.P. Byrne and M.C. Ridgway, "Irradiation-induced
defect configurations in Ge substrates characterised with perturbed
angular correlation", Nucl.Instrum.Meth. B175-177 (2001) 51-55.
30. ** M.C. Ridgway, C.J. Glover, K.M Yu, G.J. Foran, T.W. Lee,
Y. Moon and E. Yoon, "Structural characterisation of amorphised
compound semiconductors", Nucl.Instrum.Meth. B175-177 (2001) 280-285.
31. K.M. Yu, W. Walukiewicz, J. Wu, J.W. Beeman, J.W. Ager III,
E.E. Haller, W. Shan, H.P. Xin, C.W. Tu and M.C. Ridgway, "Formation
of diluted III-V nitride thin films by N ion implantation",
J.Appl.Phys. 90 (2001) 2227-2234.
32. X.F. Zhu, J.S. Williams, M.J. Conway, M.C. Ridgway,
M.-O. Ruault, F. Fortuna and H. Bernas, "Direct observation of
irradiation-induced nanocavity shrinkage in Si", Appl.Phys.Lett.
79 (2001) 3416-3418.
33. P.W. Leech, G.K. Reeves, A.S. Holland, M.C. Ridgway and
F. Shanks, "Enhancement of the etch rate of CVD diamond by prior C
and Ge implantation", Diamond and Related Materials 11 (2002) 837-840.
34. ** G. de M. Azevedo, M.C. Ridgway, K.M. Yu, C.J. Glover and
G.J. Foran, "Structural characterisation of amorphised InAs with
synchrotron radiation", Nucl.Instrum.Meth. B190 (2002) 851-855.
35. J. Bartels, R. Vianden and M.C. Ridgway, "Impurity gettering
by cavities in Si investigated with the PAC technique",
Nucl.Instrum.Meth. B190 (2002) 846-850.
36. M.-O. Ruault, M.C. Ridgway, F. Fortuna, H. Bernas and
J.S. Williams, "How nanocavities in Si shrink under ion-irradiation:
an in-situ study", Appl.Phys.Lett 81 (2002) 2617-2619.
37. ** M.C. Ridgway, G. de M. Azevedo, C.J. Glover, K.M. Yu and
G.J. Foran, "Common structure in amorphised compound semiconductors",
Nucl.Instrum.Meth. B199 (2003) 235-239.
38. ** C.J. Glover, G.J. Foran and M.C. Ridgway, "Structure of
amorphous Si investigated by EXAFS", Nucl.Instrum.Meth. B199 (2003)
195-199.
39. G. de M. Azevedo, M.C. Ridgway, J. Betlehem, K.M. Yu,
C.J. Glover and G.J. Foran, "EXAFS measurements of metal-decorated
nanocavities in Si", Nucl.Instrum.Meth. B199 (2003) 179-184.
40. M.-O. Ruault, M.C. Ridgway, F. Fortuna, H. Bernas and
J.S. Williams, "In-situ TEM study of nanocavity shrinkage in Si
under ion beam irradiation", Eur.Phys.J. AP 23 (2003) 39-40.
41. M.-O. Ruault, M.C. Ridgway, F. Fortuna, H. Bernas and
J.S. Williams, "Shrinkage mechanism of nanocavities in amorphous
Si under ion irradiation: An in-situ study", Nucl.Instrum.Meth.
B206 (2003) 912-915.
42. ** G. de M. Azevedo, C.J. Glover, K.M. Yu, G.J. Foran and
M.C. Ridgway, "Direct observation of structural relaxation in
amorphous compound semiconductors", Nucl.Instrum.Meth. B206 (2003)
1024-1027.
43. M.A. Scarpulla, K.M. Yu, O. Monteiro, M. Pillai,
M.C. Ridgway, M.J. Aziz and O.D. Dubon, "Ferromagnetic Ga1-xMnxAs
films produced by ion implantation and pulsed laser melting",
Appl.Phys.Lett. 82 (2003) 1251-1253.
44. M.V. Rao, J. Brookshire, S. Mitra, S.B. Qadri, Fischer,
J. Grun, N. Papanicolaou, M. Yousuf and M.C. Ridgway, "Athermal
annealing of Si-implanted GaAs and InP", J.Appl.Phys. 94 (2003)
130-135.
45. D.A. Brett, G. de M. Azevedo, D.J. Llewellyn and
M.C. Ridgway, "Gettering of Pd to nanocavities in Si",
Appl.Phys.Lett. 83 (2003) 946-947.
46. ** G. de M. Azevedo, C.J. Glover, M.C. Ridgway, K. M. Yu
and G. J. Foran, "Direct evidence of defect annihilation during
structural relaxation of amorphous InP", Phys.Rev. B68 (2003) 115204/1-6.
47. K.M. Yu, W. Walukiewicz, J. Wu, W. Shan, J. Beeman,
M.A. Scarpulla, O.D. Dubon, M.C. Ridgway, D.E. Mars, D.R Chamberlin
and J. F. Geisz, "Mutual Passivation of Group IV Donors and Nitrogen
in Diluted GaNxAs1-x Alloys", Appl.Phys.Lett. 83 (2003) 2844-2846.
48. P.W. Leech, G.K. Reeves, A. Holland and M.C. Ridgway,
"The effect of Au and O implantation on the etch rate of
CVD diamond", Appl.Surf.Sci. 221 (2004) 302-307.
49. ** A. Cheung, G. de M. Azevedo, C.J. Glover, D.J. Llewellyn,
R.G. Elliman, G.J. Foran and M.C. Ridgway, "Structural
perturbations within Ge nanocrystals in silica",
Appl.Phys.Lett. 84 (2004) 278-280.
50. S.B. Qadri, M. Yousuf, C.A. Kendziora, B. Nachumi,
R. Fisher, J. Grun, M.V. Rao, J. Tucker, S. Siddiqui and
M.C. Ridgway, "Structural modifications of Si-implanted GaAs
induced by the athermal annealing technique",
Appl.Phys. A (2004) in press.
51. K.M. Yu, J. Wu, W. Walukiewicz, W. Shan, J. Beeman,
D.E. Mars, D.R. Chamberlin, M.A. Scarpulla, O.D. Dubon,
M.C. Ridgway and J.F. Geisz, "Mutual Passivation of Group IV
Donors and Isovalent Nitrogen in Diluted GaNxAs1-x Alloys",
Physica B (2004) in press.
52. ** M.C. Ridgway, G. de M. Azevedo, C.J. Glover,
R.G. Elliman, D.J. Llewellyn, A. Cheung, B. Johannessen,
D.A. Brett and G.J. Foran, "EXAFS characterisation of Ge
nanocrystals in silica", Nucl.Instrum.Meth. (2004) in press.
53. ** W. Wesch and M.C. Ridgway, "Rapid amorphisation of
In0.53Ga0.47As relative to both InAs and GaAs", Mat.Sci.Semiconductor
Processing, (2004) in press.
Refereed Conference Publications:
54. M. Almonte, K.M. Yu, E.E. Haller, M.C. Ridgway, H. Hou and
J. Mirecki-Millunchick, "Implant isolation study of In0.53Ga0.47As ",
in Proceedings of the 10th International Conference on
Semi-Insulating and Semi-Conducting Materials, ed. Z. Liliental-Weber
and C. Miner (I.E.E.E., Piscataway, 1999) pp. 29-32.
55. P.N.K. Deenapanray, G. Myburg, M.C. Ridgway and
F.D. Auret, "An XPS and glancing angle RBS investigation of metallic
impurity contamination of magnetron sputter etched Si", in
Proceedings of the 12th International Colloquium on Plasma
Processes (1999) pp. 365-370.
56. J.S. Williams, M.C. Ridgway, M.J. Conway, J. Wong-Leung,
B.C. Williams, M. Petravic, F. Fortuna, M.-O. Ruault, H. Bernas,
"Interaction of point defects and impurities with open volume
defects in Silicon", in Ion Beam Synthesis and Processing of
Advanced Materials, eds. D.B. Poker, S. Moss and K.-H. Heinig
(Mat.Res.Soc., Pittsburgh, 2001) pp. O2.4.1-O2.4.11.
57. K.M. Yu, W. Walukiewicz, W. Shan, J. Wu, J.W. Beeman,
J.W. Ager III, EE. Haller and M.C. Ridgway, "Synthesis of
III-Nx-V1-x thin films by N ion implantation", in Ion Beam Synthesis
and Processing of Advanced Materials, eds. D.B. Poker, S. Moss and
K.-H. Heinig (Mat.Res.Soc., Pittsburgh, 2001)
pp. O13.3.1/R8.3.1-O13.3.6/R8.3.6.
B10.3 TEN CAREER-BEST PUBLICATIONS
1. P.J. Schultz, C. Jagadish, M.C. Ridgway, R.G. Elliman and
J.S. Williams, "Crystalline to amorphous transition for Si ion
irradiation of Si(100)", Phys.Rev. B44 (1991) 9118-9121.
2. ** M.C. Ridgway, C.J. Glover, G. Foran and K.M. Yu,
"Implantation-induced structural modification of amorphised GaAs",
J.Appl.Phys. 83 (1998) 4610-4614.
3. ** M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc,
J.L. Hansen and A. Nylandsted Larsen, "Composition-dependent
bondlengths in crystalline and amorphous GexSi1-x alloys", Phys.Rev.
B60 (1999) 10831-10836.
4. ** C.J. Glover, M.C. Ridgway, K.M. Yu, G.J. Foran, T.W. Lee,
Y. Moon, E. Yoon, "Structural characterisation of amorphised InP:
evidence for chemical disorder", Appl.Phys.Lett. 74 (1999) 1713-1715.
5. ** M.C. Ridgway, C.J. Glover, K.M. Yu, G.J. Foran, C. Clerc,
J.L. Hansen and A. Nylandsted Larsen, "Ion-dose-dependent
micro-structure in amorphised Ge", Phys.Rev. B61 (2000)
12586-12589.
6. ** C.J. Glover, M.C. Ridgway, I.D. Desnica-Frankovic, K.M. Yu,
G.J. Foran, C. Clerc, J.L. Hansen and A. Nylandsted Larsen,
"Structural-relaxation-induced bond length and bond angle changes
in amorphised Ge", Phys.Rev. B63 (2001) 073204.
7. X.F. Zhu, J.S. Williams, M.J. Conway, M.C. Ridgway,
M.-O. Ruault, F. Fortuna and H. Bernas, "Direct observation of
irradiation-induced nanocavity shrinkage in Si", Appl.Phys.Lett.
79 (2001) 3416-3418.
8. ** G. de M. Azevedo, C.J. Glover, M.C. Ridgway, K. M. Yu and
G. J. Foran, "Direct evidence of defect annihilation during
structural relaxation of amorphous InP", Phys.Rev. B68 (2003)
115204/1-6.
9. ** A. Cheung, G. de M. Azevedo, C.J. Glover, D.J. Llewellyn,
R.G. Elliman, G.J. Foran and M.C. Ridgway, "Structural perturbations
within Ge nanocrystals in silica", Appl.Phys.Lett. 84 (2004) 278-280.
10. ** M.C. Ridgway, G. de M. Azevedo, C.J. Glover, R.G. Elliman,
D.J. Llewellyn, A. Cheung, B. Johannessen, D.A. Brett and G.J. Foran,
"EXAFS characterisation of Ge nanocrystals in silica",
Nucl.Instrum.Meth. (2004) in press.
